Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
The heteroepitaxial growth of (0001) ZnO on (0001) sapphire substrates by halide vapor phase epitaxy using a two-step growth procedure was investigated. X-ray diffraction analysis revealed that single-crystal (0001) ZnO layers on (0001) sapphire substrates were grown at 400 °C. High-temperature heteroepitaxy at 1000 °C on (0001) sapphire substrates was realized by two-step growth using the ZnO layer grown at 400 °C as a buffer layer. Two-dimensional layer growth at 1000 °C was realized on buffer layers thicker than 0.4 μm. Photoluminescence (PL) measurements performed at room temperature for the ZnO layer grown on the 0.4-μm-thick buffer layer showed a significant blueshift of near-band-edge emission (NBE). A thick buffer layer of 0.8 μm was found to be necessary for a successful two-step growth without a blueshift of NBE in the PL spectra, which is caused by a large compressive stress.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2011-12-25
著者
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Murakami Hisashi
Department Of Applied Chemistry Faculty Of Technoloty Tokyo University Of Agricultrue And Technoloty
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Koukitu Akinori
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Masuda Rui
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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Kumagai Yoshinao
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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Koukitu Akinori
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Murakami Hisashi
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Togashi Rie
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Togashi Rie
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Kumagai Yoshinao
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Masuda Rui
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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