Growth of GaAs by Cold-Wall Metalorganic-Chloride Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
This report describes the first successful growth of GaAs by metalorganic-chloride vapor phase epitaxy in a cold-wall type reactor. Triethylgallium was adopted as the group III source material, and AsCl_3 instead of fatally toxic AsH_3 was used as the arsenic source. Growth rates of about 10 μm/h with mirror like surfaces were obtained at the growth temperature of 650℃. The growth rate study on this system showed that mass transport was the rate-determining step in the overall process.
- 社団法人応用物理学会の論文
- 1990-12-20
著者
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KOUKITU Akinori
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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Ikeda H
Department Of Applied Chemistry Tokyo University Of Agriculture And Technology
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Hashimoto S
Texas Instruments Tsukuba R & D Center Ltd. Ibaraki Jpn
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IKEDA Hitoshi
Department of Pathology/Pathophysiology, Division of Pathophysiological Science, Hokkaido University
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SEKI Hisashi
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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Koukitu Akinori
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Seki H
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Seki Hisashi
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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IKEDA Hitoshi
Product Planning, Strategic Product Planning Department, Takeda Chemical Industries, Ltd.
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Ikeda Hitoshi
Product Planning Strategic Product Planning Department Takeda Chemical Industries Ltd.
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KAMISAWA Masaru
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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Ikeda Hitoshi
Department Of Clinical Laboratory Medicine The University Of Tokyo
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Kamisawa Masaru
Department Of Applied Chemistry Tokyo University Of Agriculture And Technology
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IKEDA Hitoshi
Department of Animal Physiology, Faculty of Agriculture, Nagoya University
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