Determination of Surface Chemical Species in GaAs Atomic Layer Epitaxy by In Situ Gravimetric Monitoring
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概要
- 論文の詳細を見る
Atomic layer epitaxy (ALE) using a GaCl source is investigated by a real-time in situ gravimetric monitoring method. An ALE system with an electrobalance is used as a monitoring system. The direct gravimetric information from the growing surface in the growth system of ALE is monitored during an ALE cycle. It is shown that the surface chemical species are one-monolayer Ga atoms during H_2 purge after GaCl supply, and the in situ gravimetric method is a powerful tool for the investigation of the ALE growth mechanism.
- 社団法人応用物理学会の論文
- 1994-04-15
著者
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Miura Y
Ntt Lsi Laboratories
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Koukitu Akinori
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Takahashi Naoyuki
Department Of Applied Chemistry Tokyo University Of Agriculture And Technology
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Seki H
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Seki Hisashi
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Takahashi N
Toyohashi Univ. Technol. Toyohashi Jpn
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Miura Yoshiki
Department Of Protein Biochemistry Institute Of Life Science Kurume University
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