New Vapor Phase Growth Method of FeN Thin Films Using a Chloride Source
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概要
- 論文の詳細を見る
A new method using FeCl_3 and NH_3 sources has been demonstrated for the vapor phase growth of FeN on a glass substrate. The X-ray diffractogram showed a typical ε-Fe_3N with a hexagonal structure pattern. The growth rate increased with increasing growth temperature. The maximum growth rate was about 10 μm/h at 700℃. The saturation magnetization and coercive forces of ε-Fe_3N deposited at 700℃ were 112.2 emu/g and 32.0 Oe, respectively.
- 社団法人応用物理学会の論文
- 1999-10-15
著者
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Nakamura Takato
Department Of Applied Chemistry And Materials Technology Faculty Of Engineering Shizuoka University
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FUJII Toshitaka
Department of Electrical & Electronic Engineering, Toyohashi Univerxity of Technology
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Takahashi Naoyuki
Department Of Applied Chemistry Tokyo University Of Agriculture And Technology
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Toda Yoshihiro
Department Of Materials Science Shizuoka University
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Takahashi Naoyuki
Department Of Materials Science Shizuoka University
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Fujii Toshitaka
Deparment Of Electrical Engineering And Electronics Toyohashi University Of Technology
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