Unstable Region of Solid Composition in Ternary Nitride Alloys Grown by Metalorganic Vapor-Phase Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-12-15
著者
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KOUKITU Akinori
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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SEKI Hisashi
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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Koukitu Akinori
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Seki Hisashi
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
関連論文
- Nonlinear Magneto-Optical Studies of Magnetic Nano Structures Fabricated by Damascene Technique Using Electron Beam Lithography
- Investigation of Hydrogen Chemisorption on GaAs(111)A Ga Surface by In Situ Monitoring and Ab Initio Calculation
- Theoretical Investigation of Arsenic Desorption from GaAs(001) Surfaces under an Atmosphere of Hydrogen
- Self-Separation of a Thick AIN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire
- In Situ Gravimetric Monitoring of Decomposition Rate from GaN (0001) and (000^^1) Surfaces Using Freestanding GaN : Semiconductors
- Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate : Semiconductors
- In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface
- Growth of Thick Hexagonal GaN Layer on GaAs (111)A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy
- Investigation of Substrate Orientation Dependence for the Growth of GaN on GaAs(111)A and(111)B Surfaces by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy
- Halogen-Transport Atomic-Layer Epitaxy of Cubic GaN Monitored by In Situ Gravimetric Method
- Growth of a NdBaCuO Superconducting Thin Film on a MgO Substrate by Mist Microwave-Plasma Chemical Vapor Deposition Using a CeO_2 Buffer Layer
- Thermodynamic Study on Metalorganic Vapor-Phase Epitaxial Growth of Group III Nitrides
- Growth of GaN on GaAs(111)B by Metalorganic Hydrogen Chloride VPE Using Double Buffer Layer
- Thermodynamic Analysis of Hydride Vapor Phase Epitaxy of GaN
- Study of Pulse Laser Assisted Metalorganic Vapor Phase Epitaxy of InGaN with Large Indium Mole Fraction
- Investigation of Arsenic Desorption from GaAs (111) B Surface in Atmospheric Pressure Atomic Layer Epitaxy
- Growth of InN at High Temperature by Halide Vapor Phase Epitaxy
- Vapor Phase Epitaxy of In_xGa_N Using InCl_3, GaCl_3 and NH_3 Sources
- Growth of NdBaCu0 Superconducting Thin Films Using Mist Microwave-Plasma Chemical Vapor Deposition with Dual Sources
- In Situ Monitoring of the Chemisorption of Hydrogen Atoms on (001) GaAs Surface in GaAs Atomic Layer Epitaxy
- Thermodynamic Analysis of In_xGa_N Alloy Composition Grown by Metalorganic Vapor Phase Epitaxy
- Investigation of Buffer Iayer of Cubic GaN Epitaxial Films on (100)GaAs Grown by Metalorganic-Hydrogen Chloride Vapor-Phase Epitaxy
- New Epitaxial Growth Method of Cubic GaN on (100) GaAs Using (CH_3)_3Ga, HCl and NH_3
- Influence of Sr Content on Tl-Ba-Sr-Ca-Cu-O Superconducting Thin Films Prepared by the Mist Microwave-Plasma Chemical Vapor Deposition Method
- Preparation of Tl-Systerm Superconducting Thin Films by the Mist Microwave-Plasma Chermical Vapor Deposition Method
- Solid Composition of In_Ga_xAs Grown by the Halogen Transport Atomic Layer Epitaxy : Condensed Matter
- Thermodynamic Analysis on Molecular Beam Epitaxy of GaN, InN and AIN
- Thermodynamical Analysis of AlGaInP Vapor Growth
- Vapor-Phase Epitaxial Growth of GaAs by the Single Flat Temperature Zone Method
- Unstable Region of Solid Composition in Ternary Nitride Alloys Grown by Metalorganic Vapor-Phase Epitaxy
- Thermodynamic Calculation of the VPE Growth of In_Ga_xAs_yP_ by the Trichloride Method
- Growth and Thermodynamic Analysis of Atomic Layer Epitaxy of ZnS_xSe_
- In Situ Gravimetric Monitoring of the GaAs Growth Process in Atomic Layer Epitaxy
- In Situ Monitoring of Surface Kinetics in GaAs Atomic Layer Epitaxy by Surface Photo-Absorption Method
- Atmospheric Pressure Atomic Layer Epitaxy of ZnSe Using Zn and H_2 Se
- Growth of GaAs by Cold-Wall Metalorganic-Chloride Vapor Phase Epitaxy
- Effects of Carrier Gas and Substrate on the Electrical Properties of Epitaxial GaAs Grown by the Single Flat Temperature Zone Chloride VPE Method
- Halide Vapor Phase Epitaxy of Mg_xZn_O Layers on Zn-Polar ZnO Substrates
- In Situ Observation of Halogen-Transport Atomic Layer Epitaxy of GaAs in Inert Carrier Gas System
- In Situ Optical Monitoring of Hydrogen Chemisorption on the GaAs(111)B Ga Surface
- The VPE Growth of GaAs by the Pulsed Introduction of H_2 : Condensed Matter
- Preparation of (Tl, Pb)-Sr-Ca-Cu-O Superconducting Thin Films by the Mist Microwave-Plasma Chemical Vapor Deposition Method
- Thermodynamic Calculation of the VPE Growth of In_Ga_xAs by the Trichloride Method
- Determination of Surface Chemical Species in GaAs Atomic Layer Epitaxy by In Situ Gravimetric Monitoring
- Preparation of (Bi, Pb)-Sr-Ca-Cu-O Superconducting Thin Films by the Mist Microwave-Plasma Chemical Vapor Deposition Method
- Preparation of Y-Ba-Cu-O Superconducting Thin Films by the Mist Microwave Plasma Decomposition Method
- Thermodynamic Analysis on Vapor Phase Epitaxy of GaAs by GaCl_3 and AsH_3 System : Condensed Matter
- Theoretical Investigation of Arsenic Desorption from GaAs(001) Surfaces under an Atmosphere of Hydrogen
- Improvements in Optical Properties of (0001) ZnO Layers Grown on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy Using Thick Buffer Layers
- Preparation of a Freestanding AIN Substrate from a Thick AIN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AIN Substrate Prepared by Physical Vapor Transport
- Solid Composition Control of MgxZn1-xO in Halide Vapor Phase Epitaxy
- Study of Pulse Laser Assisted Metalorganic Vapor Phase Epitaxy of InGaN with Large Indium Mole Fraction
- Thermodynamic Analysis of Coherently Grown GaAsN/Ge: Effects of Different Gaseous Sources
- Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy
- Influence of Lattice Constraint from InN and GaN Substrate on Relationship between Solid Composition of InxGa1-xN Film and Input Mole Ratio during Molecular Beam Epitaxy
- Preparation of a Freestanding AlN Substrate by Hydride Vapor Phase Epitaxy at 1230 °C Using (111)Si as a Starting Substrate
- Effect of High NH
- High-Temperature Heat-Treatment of c-, a-, r-, and m-Plane Sapphire Substrates in Mixed Gases of H
- High Temperature Ramping Rate for GaAs (111)A Substrate Covered with a Thin GaN Buffer Layer for Thick GaN Growth at 1000°C
- Effect of High NH₃ Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates (Special Issue : Recent Advances in Nitride Semiconductors)
- Thermodynamic Analysis of Coherently Grown GaAsN/Ge: Effects of Different Gaseous Sources
- Structural and Optical Properties of Carbon-Doped AIN Substrates Grown by Hydride Vapor Phase Epitaxy Using AIN Substrates Prepared by Physical Vapor Transport
- Method for Theoretical Prediction of Indium Composition in Coherently Grown InGaN Thin Films