In Situ Optical Monitoring of Hydrogen Chemisorption on the GaAs(111)B Ga Surface
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概要
- 論文の詳細を見る
The hydrogen chemisorption on the GaAs(111)B Ga surface is investigated under atmospheric pressure using the surface photoabsorption (SPA) and temperature-programmed desorption (TPD) methods. The SPA signal change shows the existence of two kinds of hydrogen-terminated surfaces, monohydride and trihydride surfaces, depending on the partial pressure of hydrogen. In both surfaces, hydrogen in the carrier gas reacts dissociatively with Ga atoms on the (111)B surface, and the desorption of hydrogen occurs via the reverse reaction in the inert carrier gas. It is shown that the surface coverages of hydrogen on the surfaces are well explained by the Langmuir equation.
- 社団法人応用物理学会の論文
- 1998-03-15
著者
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KOUKITU Akinori
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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Koukitu Akinori
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Taki Tetsuya
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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Taki Tetsuya
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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