Atomic-Structure-Dependent Adsorption of Ammonia onto GaAs (111) B Surfaces
スポンサーリンク
概要
- 論文の詳細を見る
Adsorption of ammonia, which is the initial stage of the vapor phase epitaxial growth of nitride semiconductors, is examined by using pulsed-ammonia-beam scatterings from differently reconstructed GaAs (111) B surfaces. It is found that the surface atomic structure of GaAs (111) B surface more strongly influences the ammonia adsorption than that of GaAs (100) surface. Incident ammonia molecules are temporarily trapped in a deep precusor state on a (√<19>×√<19>) R23.4° surface, while they are desorbed without such a surface trapping from an As-excess (2×2) surface. On the other hand, ammonia is efficiently stuck on a Ga-rich (1×1) surface, which is probably related to the efficient surface decomposition of ammonia under a specific condition of nitride epitaxy. The results are discussed on the basis of the atomic arrangement of the reconstructed surface.
- 社団法人応用物理学会の論文
- 1998-10-01
著者
-
Sasaki Masahiro
Institute Of Applied Physics University Of Tsukuba
-
Yamamoto Shigehiko
Institute Of Applied Physics And Center For Tsukuba Advanced Research Alliance University Of Tsukuba
-
Yamamoto Shigehiko
Institute Of Applied Physics University Of Tsukuba
-
Sasaki Masahiro
Institute Of Applied Physics And Center For Tsukuba Advanced Research Alliance University Of Tsukuba
-
SUGAWARA Shigeru
Institute of Applied Physics, University of Tsukuba
-
Sugawara Shigeru
Institute Of Applied Physics University Of Tsukuba
-
Sasaki Masahiro
Institute of Applied Physics and Center for Tsukuba Advanced Research Alliance (TARA), University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
-
Yamamoto Shigehiko
Institute of Applied Physics and Center for Tsukuba Advanced Research Alliance (TARA), University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
関連論文
- 配線やデバイスの立体化に可能性を開く3次元フォトリソグラフィ : (2)露光(講座「ちょっとMEMS」第9回)
- 配線やデバイスの立体化に可能性を開く3次元フォトリソグラフィ : (1)成膜(講座「ちょっとMEMS」第8回)
- アセンブリを支援するMEMS構造(講座「ちょっとMEMS」第7回)
- MEMSデバイス製作とアセンブリをマッチングする試み(講座「ちょっとMEMS」第6回)
- 高密度プラズマの光マイクロマシンへの応用(高密度プラズマとその応用技術の最前線)
- Tunable Vertical Comb for Driving Micromirror Realized by Bending Device Wafer(Micro/Nano Photonic Devices,Microoptomechatronics)
- Micromirror with Two Parallel Rotation Axes for External Cavity Diode Laser(Micro/Nano Photonic Devices,Microoptomechatronics)
- 光通信デバイスのためのMEMS (特集 光ネットワーク時代の光技術)
- MEMS構造を利用した光集積型センサ
- 位相シフトマスクを利用した立体サンプルの露光法
- 位相シフトマスクを利用した立体サンプルへの微細パターン露光法
- 分割した櫛歯電極型静電駆動アクチュエータ
- リットマン型外部共振器波長可変レーザ用ミラーデバイスの開発
- (2)細胞の力学特性計測のためのレーザ顕微鏡組込み型原子間力顕微鏡(AFM)システムの開発(論文,日本機械学会賞〔2004年度(平成16年度)審査経過報告〕)
- C-3-113 MEMSを用いたサージ光抑制器の開発(C-3. 光エレクトロニクス, エレクトロニクス1)
- Tunable Fiber Bragg Grating Combined with Microactuator
- シリコンマイクロマシニングと集積化技術
- 光MEMS用マイクロアクチュエータ(情報機器と光関連技術,W17 情報・知能・精密機器部門)
- 光マイクロマシンと集積化
- MEMS技術による光学システムの集積化--集積化を目指したMEMSと光学システムの組み合わせについて
- 光 MEMSのための表面微細加工と集積化技術
- Fabrication of High-Accuracy Microtranslation Table for Near-Field Optical Data Storage Actuated by Inverted Scratch-Drive Actuators
- Local Tunneling Barrier Height Measurement on Au(111)
- Moire-like Distribution of Local Tunneling Barrier Height of the Monolayer Graphite Adsorbed on Pt(111) Surface
- Local Tunneling Barrier Height Studies of the Initial Stage of Cs Adsorption on a Si(111) 7 x 7 Surface
- Scanning funneling Microscopy (STM)/LocaI Tunneling Barrier Height (LBH) Studies on Cs Adsorption on a Pt(111) Surface
- 523 櫛歯電極型静電アクチュエータを用いた大変位XYステージ(ロボティクス,2.学術講演)
- Molecular Beam Time of Flight Analysis of the Reaction Dynamics of Alkane Molecules Interacting with a Pt(111) Surface
- Inelastic Collision Processes of Methane and Ethane Molecules at a Pt(111) Surface Studied by Molecular Beam Scattering Techniques
- A Novel He Atom Scattering Technique Complementary to Temperature Programmed Desorption
- He Atomic Beam Scattering Study of Pt(111) Super-Structure Surface Induced by High Energy Molecular Beam of H_2O
- Velocity Distribution Measurements of a Supersonic Methane Molecular Beam Reflected from a Pt(111) Surface at Various Reflection Angles
- Surface Morphology of Ba Atomic Layer on a LiF(001) Surface Studied by He Atomic Beam Scattering
- Inelastic Rainbow Scattering of CH_4 Molecules from a LiF(001) Surface
- Ion Irradiation Effect on the Microscopic Potential Distribution of MgO Surface
- レジストスプレーコーティングの特性と反応
- Mental Task Recognition by NN with Artificial Immune System
- Electronic Modification of C60 Monolayers via Metal Substrates
- ナノテク最前線 高機能マイクロミラーデバイス--小型かつ付加価値の高いミラーデバイスへの試み
- ナノテク最前線 光学系一体型の近接場光プローブ
- 研究室紹介 東北大学大学院工学研究科ナノメカニクス専攻メカノプティクス分野--光集積とメカノプティクス
- 光 MEMS の情報デバイスへの展開
- 光でつくるマイクロ・ナノ機械:光リソグラフィによる立体加工 (特集 光ナノ加工)
- WS-06 NANO/MICRO-TECHNOLOGIES FOR HIGH DENSITY DATA-STORAGE AND OPTICAL APPLICATIONS
- Subwavelength Antirefiection Gratings for Light Emitting Diodes and Photodiodes Fabricated by Fast Atom Beam Etching
- Local Tunneling Barrier Height Image of the Si(111)-(7×7) Surface
- 引張応力のあるトーションバーを用いた静電駆動型ミラーデバイス
- 細胞の力学特性計測のためのレーザ顕微鏡組込み型原子間力顕微鏡(AFM)システムの開発(機械力学,計測,自動制御)
- SC-10-3 マイクロマシニングによる集積型光学システムの制作
- Si基板折り曲げにより実現する立体的マイクロ光学ベンチ
- Superiority of an AlN Intermediate Layer for Heteroepitaxy of Hexagonal GaN
- Atomic-Structure-Dependent Adsorption of Ammonia onto GaAs (111) B Surfaces
- Visualizing the Interrelation between Surface Topograph and Surface Potential by means of a Scanning Maxwell Stress Microscope
- Molecular Beam Study of H2O Interaction with Pt(111)
- Ordering of C_ on One-Dimensional Template of Single-Domain Ge(110)-16×2 and Si(110)-16×2 Surfaces
- Necessary Conditions for Two-Lobe Patterns in Field Emission Microscopy
- Localized and Delocalized Features of Microscopic Work Functions
- Band Diagrams of BaSi2/Si Structure by Kelvin Probe and Current–Voltage Characteristics
- Local Tunneling Barrier Height Observations on Ni3Al(111)
- Atomistic Field Emission Distributions of Highly Oriented Pyrolytic Graphite Surfaces with Defects
- Local Tunneling Barrier Height Studies of Thermally Treated CO- and O-covered Pt(100) Surfaces
- Microscopic Study on the Work Function Reduction Induced by Cs-Adsorption