Free-Carrier Effects on Zero- and One-Phonon Absorption Onsets of $n$-Type ZnO

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概要

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• Epitaxial, $n$-type ZnO:Ga layers grown by laser molecular-beam epitaxy were investigated by Hall-effect and spectroscopic techniques. We have studied the effects of free carriers on their optical properties in the spectral range close to the fundamental energy gap. To precisely determine the absorption onset energies, line-shape analysis of the absorption spectrum was performed using a model taking the many-body effect due to the presence of high-density electron gas into account. As a result, donor doping gives rise to a systematic blueshift of the fundamental absorption edge, consistent with the Burstein–Moss effect. The Burstein–Moss shifting behavior of ZnO:Ga is compared with that in the case of ZnO:Al. The experimental data for ZnO:Ga agree very well with the theory developed by Sernelius et al. [Phys. Rev. B 37 (1988) 10244], while the data for ZnO:Al do not. The temperature-dependent spectroscopy allowed us to investigate the effect of free carrier also on an exciton-phonon complex. It was found that, at low temperatures, the spectrum had an abrupt onset followed by two asymmetric peaks, including the anti-Stokes phonon sideband, which is explained in terms of optical singularities.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-10-15

著者

• Ohtomo Akira

  Institute For Materials Research Tohoku University

• MAKINO Takayuki

  Photodynamics Research Center, RIKEN (Institute of Physical and Chemical Research)

• Segawa Yusaburo

  Photodynamics Research Center Frontier Research Program The Institute Of Physical And Chemical Resea

• Koinuma Hideomi

  Materials And Structures Labolatory Tokyo Institute Of Technology

• Tsukazaki Atsushi

  Institute For Materials Research (imr) Tohoku University

• Kawasaki Masashi

  Institute For Chemical Research Kyoto University

• Yoshida Shin

  Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

• Koinuma Hideomi

  Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan

• Segawa Yusaburo

  Photodynamics Research Center, RIKEN (Institute of Physical and Chemical Research), Aramaki aza Aoba 519-1399, Aoba-ku, Sendai 980-0845, Japan

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