Recognition of the Atomic Terminating Layer in Perovskite Oxide Substrates by Reflection High Energy Electron Diffraction
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概要
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The chemical surface structure in perovskite oxides has been identified by monitoring the oscillation intensity of reflection high energy electron diffraction patterns during initial growth of MO (M=Sr, Ba) films on the perovskite substrate. This successful analysis technique is demonstrated for the film growth on A and B-site oxides terminated ABO3 substrates. Epitaxial growth of MO thin films is dominated by chemical interaction between the growing lattice and the underlying atomic layer to follow the crystal habit of forming a more stable layer unit cell. This simple technique can be used as a substitute to relevant physical techniques such as coaxial impact-collision ion scattering spectroscopy and friction force microscopy that are currently used techniques to determine the termination layer.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-04-01
著者
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Koinuma Hideomi
Materials And Structures Labolatory Tokyo Institute Of Technology
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Takahashi Ryota
Materials And Structures Laboratory Tokyo Institute Of Technology
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Matsumoto Yuji
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Matsumoto Yuji
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan
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Takahashi Ryota
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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