Controlled Carrier Generation at a Polarity-Discontinued Perovskite Heterointerface
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概要
- 論文の詳細を見る
Electronic properties of polarity-discontinued heterointerfaces between two perovskite band insulators, LaAlO3 and SrTiO3, have been investigated. Various heterointerfaces with AlO2-LaO/TiO2-SrO and LaO-AlO2/SrO-TiO2 termination including the mixtures of these two domains are fabricated in a single experimental run. This is accomplished by pulsed laser depositions of prescribed coverage ($\theta_{\text{SrO}}$) of SrO atomic layer on TiO2-terminated SrTiO3 (001) surface and successive LaAlO3 layer, where the processes are regulated in an atomic scale by in situ reflection high-energy electron diffraction. Increasing $\theta_{\text{SrO}}$ from 0 to 1, extra electrons density at the heterointerfaces decreases from a value, close to 0.5 electrons at one Ti site, to zero, while low temperature mobility remains above 100 cm2/V$\cdot$s. Our result implies a way to control carrier density in polarity-discontinued heterointerfaces.
- Japan Society of Applied Physicsの論文
- 2004-08-01
著者
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Nishimura Jun
Institue Of Space And Astronautical Sci. Japan Aerospace Exploration Agency
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Ohtomo Akira
Institute For Materials Research Tohoku University
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Murakami Youichi
Department Of Aerospace Engineering College Of Engineering Osaka Prefecture University
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Ohkubo Atsushi
Institute For Materials Research Tohoku University
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Kawasaki Masashi
Institute For Chemical Research Kyoto University
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Ohkubo Atsushi
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Ohtomo Akira
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Nishimura Jun
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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