Hole Transport in $ p$-Type ZnO

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概要

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• A two-band model involving the A- and B-valence bands was adopted to analyze the temperature-dependent Hall effect measured on $ p$-type ZnO. The hole transport characteristics (mobilities and effective Hall factor) are calculated using the "relaxation time approximation" as a function of temperature. It is shown that the lattice scattering by the acoustic deformation potential is predominant. In the calculation of the scattering rate for ionized impurity mechanism, an activation energy of 100 or 170 meV is used at different compensation ratios between donor and acceptor concentrations. The theoretical Hall mobility at an acceptor concentration of $7\times 10^{18}$ cm3 is about 70 cm2 V-1 s-1 with the activation energy of 100 meV and the compensation ratio of 0.8 at 300 K. We also found that the compensation ratios conspicuously affected the Hall mobilities.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-08-15

著者

• Ohtomo Akira

  Institute For Materials Research Tohoku University

• KOINUMA Hideomi

  National Institute for Materials Science

• MAKINO Takayuki

  Department of Material Science, University of Hyogo

• Tsukazaki Atsushi

  Institute For Materials Research (imr) Tohoku University

• Kawasaki Masashi

  Institute For Chemical Research Kyoto University

• Tsukazaki Atsushi

  Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

• Makino Takayuki

  Department of Material Science, University of Hyogo, Ako-gun, Hyogo 678-1297, Japan

• Koinuma Hideomi

  National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

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