Improvement of electron mobility above 100,000 cm[2] V[-1] s[-1] in Mg[x]Zn1-xO/ZnO heterostructures
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Nakahara Ken
Interdisciplinary Devices R&d Center Rohm Co. Ltd.
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Nakahara Ken
Advanced Compound Semiconductors R&d Center Rohm Co. Ltd.
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Tsukazaki Atsushi
Institute For Materials Research (imr) Tohoku University
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Akasaka Shunsuke
Interdisciplinary Devices R&d Center Rohm Co. Ltd.
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Tsukazaki Atsushi
Institute For Materials Research Tohoku University
関連論文
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- Improvement of Electron Mobility above 100,000 cm2 V-1 s-1 in MgxZn1-xO/ZnO Heterostructures
- Improvement of electron mobility above 100,000 cm[2] V[-1] s[-1] in Mg[x]Zn1-xO/ZnO heterostructures
- Optimization of the Growth Conditions for Molecular Beam Epitaxy of MgxZn1-xO ($0\leq x\leq 0.12$) Films on Zn-Polar ZnO Substrates
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