Improvement of Electron Mobility above 100,000 cm2 V-1 s-1 in Mg<sub>x</sub>Zn<sub>1-x</sub>O/ZnO Heterostructures
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概要
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We discuss the electron mobility ($\mu$) of a two-dimensional electron gas (2DEG) confined at the Mg<sub>x</sub>Zn<sub>1-x</sub>O/ZnO heterointerface grown by molecular-beam epitaxy. With increasing $x$ from 0.05 to 0.2, the electron density ($n$) was enhanced and $\mu$ was suppressed due to interface roughness or alloy disorder scattering. By the optimization of growth conditions, in particular growth rate, ionized impurity scattering in the ZnO channel could be reduced significantly. With tuning $n$ by a gate voltage on top-gated Hall-bar devices, the peak $\mu$ at 2 K was enhanced to 130,000 cm2 V-1 s-1 at $n = 3\times 10^{11}$ cm-2.
- 2011-08-25
著者
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Ohtomo Akira
Department Of Applied Chemistry Tokyo Institute Of Technology
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Nakahara Ken
Advanced Compound Semiconductors R&d Center Rohm Co. Ltd.
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Kawasaki Masashi
Quantum-phase Electronics Center (qpec) And Department Of Applied Physics University Of Tokyo
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Tsukazaki Atsushi
Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Kawasaki Masashi
Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Akasaka Shunsuke
Advanced Compound Semiconductors R&D Center, ROHM Co., Ltd., 21 Mizosaki-cho, Saiin, Ukyo-ku, Kyoto 615-8585, Japan
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Nakahara Ken
Advanced Compound Semiconductors R&D Center, ROHM Co., Ltd., Kyoto 615-8585, Japan
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Akasaka Shunsuke
Advanced Compound Semiconductors R&D Center, ROHM Co., Ltd., Kyoto 615-8585, Japan
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Ohtomo Akira
Department of Applied Chemistry, Tokyo Institute of Technology, Meguro, Tokyo, 152-8552, Japan
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