Novel Semiconductor Technologies of ZnO Films towards Ultraviolet LEDs and Invisible FETs(Special Issue on Electronic Displays)
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概要
- 論文の詳細を見る
We present novel semiconductor technologies of ZnO epitaxial films with using laser molecular-beam epitaxy method. Exciting optical properties such as room temperature lasing in ZnO nanocrystalline films and quantum size effects in ZnO/Mg_xZn_1-xO superlattices were observed. By developing crystalline quality with using lattice-matched substrates, we could control resistivity of the doped ZnO films from 10^-3Ωcm to 10^4Ωcm. These results would provide us an opportunity to construct a monolithic array consisted of light emitting devices and field effect transistors towards a possible flat panel display.
- 社団法人電子情報通信学会の論文
- 2000-10-25
著者
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Ohtomo Akira
Department Of Industrial Chemistry University Of Tokyo
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Ohtomo Akira
Department Of Applied Chemistry Tokyo Institute Of Technology
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Ohtomo A
The Author Is With The Department Of Innovative And Engineered Materials Tokyo Institute Of Technolo
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OHTOMO Akira
The author is with the Department of Innovative and Engineered Materials, Tokyo Institute of Technol
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KAWASAKI Masashi
The author is with the Department of Innovative and Engineered Materials, Tokyo Institute of Technol
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Ohtomo Akira
Tokyo Inst. Technol. Tokyo Jpn
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Ohtomo Akira
Tohoku Univ. Sendai Jpn
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Kawasaki Masashi
The Author Is With The Department Of Innovative And Engineered Materials Tokyo Institute Of Technolo
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