An in-situ Fabrication and Characterization System Developed for High Performance Organic Semiconductor Devices
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概要
- 論文の詳細を見る
We have designed and set up a fabrication and characterization system for organic devices which enables us to assemble all components of devices and to characterize the device properties without breaking the vacuum. Using this system, top and bottom contact C60 field effect transistors (FETs) were fabricated and their performance was characterized. The top contact FET exhibited a mobility as high as 1.4 cm2/(V$\cdot$s), which was higher than the bottom contact FET.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-06-15
著者
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Koinuma Hideomi
Materials And Structures Labolatory Tokyo Institute Of Technology
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HAEMORI Masamitsu
Materials and Structures Laboratory, Tokyo Institute of Technology
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Itaka Kenji
Materials And Structures Laboratory Tokyo Institute Of Technology
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Yaginuma Seiichiro
Materials And Structures Laboratory Tokyo Institute Of Technology
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Yamaguchi Jun
Materials And Structures Laboratory Tokyo Institute Of Technology
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Itaka Kenji
Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Haemori Masamitsu
Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Yaginuma Seiichiro
Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Yamaguchi Jun
Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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