Fast Boron Diffusion in Si Crystal under Electron Irradiation at Room Temperature Indicated by the Enhanced Formation of Boron-Hydrogen Pairs
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概要
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We observed the enhanced formation of boron-hydrogen (BH) pairs during electron irradiation of Si crystals co-doped with boron and hydrogen. Such formation was not observed in case of GaH pairs. These results indicate that the BH formation during electron irradiation is due to enhancement of B motion but not hydrogen motion. The optical absorption spectrum of BH pairs observed in the above experiment was the same as that formed by annealing of similar specimens, in which B occupies a substitutional site, B(s). Hence, the observed spectrum is due to B(s)H pairs in both experiments, even though the above B motion occurs due to motion of interstitial B.
- 2005-02-10
著者
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Kasuya Atsuo
Center For Interdisciplinary Research Tohoku University
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Kojima Ken-ichi
Graduate School Of Integrated Science Yokohama City University
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Suezawa Masashi
Graduate School Of Integrated Science Yokohama City University
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Kojima Ken-ichi
Graduate School of Integrated Science, Yokohama City University, Yokohama 236-0027, Japan
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