Vacancy Formation Energy at Metal-Silicon Interface Region

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概要

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• We studied the vacancy formation energy in silicon crystals evaporated with various metals. Specimens were cut out from a high-purity FZ. Si crystal. They were evaporated with various metals and heated in hydrogen gas followed by quenching in water. Instead of vacancy (V) concentration, we measured the optical absorption coefficient due to VH4, which is a complex of one V and four H atoms. The vacancy formation energy in these specimens was found to be much smaller than that in high-purity specimens and that in specimens doped with metallic impurities in an isolated state (solid solution). Moreover, after heating for a short time, the vacancy concentration exhibited a spatial distribution decreasing with distance from the interface, which suggests that the vacancy source is the interface region.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2005-04-10

著者

• Kasuya Atsuo

  Center For Interdisciplinary Research Tohoku University

• Saitoh Kesami

  Institute For Materials Research Tohoku University

• Kojima Ken-ichi

  Graduate School Of Integrated Science Yokohama City University

• Suezawa Masashi

  Graduate School Of Integrated Science Yokohama City University

• Saitoh Kesami

  Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

• KASUYA Atsuo

  Center for Interdisciplinary Research and Graduate School of Engineering, Tohoku University

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