Enhancement of Boron Diffusion in Silicon by Continuous Wave CO2 Laser Irradiation
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概要
- 論文の詳細を見る
We investigated the diffusion of boron (B) by the irradiation of cw CO2 laser light. The diffusion of B was enhanced by irradiating the laser light during annealing in Ar/O2 ambient. It was found that the irradiation of the laser light had the effect of enhances on the growth of an oxide layer. The possible mechanism of the enhanced diffusion is that the excess self-interstitials injected by oxidation at a laser-irradiated point assist the diffusion of B.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-08-15
著者
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Kakimoto Koichi
Research Instittue For Applied Mechanics Kyushu University
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Suto Shozo
Department Of Physics Faculty Of Science Tohoku University
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Yamada-kaneta Hiroshi
Atsugi Laboratories Fujitsu Ltd.
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Tanahashi Katsuto
Atsugi Laboratories, FUJITSU Limited, Atsugi, Kanagawa 243-0197, Japan
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Kakimoto Koichi
Research Institute for Applied Mechanics, Kyusyu University, Kasuga, Fukuoka 816-8580, Japan
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