Study of the Exciton State by Magneto-Raman Scattering in HgI_2
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概要
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We have measured the resonant Raman scattering by two ff.-phonons in theA-exciton region of a layer semiconductor Hgl.. We find sharp peaks in theRaman scattering efficiency at the incident photon energies equal to the excitonlevels up to n=4. The binding energy is estimated to be 104.4 cm- ' from the fitfor the n>2 excitons to hydrogenic series. This value is very much smaller thanthe observed binding energy of the IS exciton, 256 cm '. Such a large discrepancybetween the experimental and calculated binding energies is interpreted in termsof the exciton-LO phonon coupling characteristic of a layer semiconductor.From the diamagnetic shift of these peaks, we obtain the reduced masses paralleland perpendicular to the c-axis as 0.31 m, and 0.24 m?, respectively.
- 社団法人日本物理学会の論文
- 1981-02-15
著者
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Kasuya Atsuo
Institute Of Materials Resesrch Tohoku University
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GOTO Takenari
Institute of Materials Science,University of Tsukuba
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Kasuya Atsuo
Institute For Iron Steel And Other Metals Tohoku University
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Goto Takenari
Institute Of Materials Science University Of Tsukuba
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