Suezawa M | Institute For Materials Research Tohoku University

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著作論文

Impurity Dependence of Vacancy Formation Energy in Silicon Determined by a New Quenching Method
Vacancy Formation Energy of Silicon Determined by a New Quenching Method : Semiconductors
Vacancy-Oxygen Pairs and Vacancy-Oxygen-Hydrogen Complexes in Electron-Irradiated n-type Cz-Si Pre-Doped with Hydrogen
Properties of Platinum-Hydrogen Complexes in Silicon : an ESR Study : Semiconductors
Optical Absorption Study of Electron-irradiated Czochralski-grown Silicon Doped with Hydrogen(Semiconductors)
ESR Spectra from Platinum-Hydrogen Pair in Silicon : Semiconductors
Positron Annihilations Associated with Defects in Plastically Deformed Si
Charge State Dependences of Positron Trapping Rates Associated with Divacancies and Vacancy-Phosphorus Pairs in Si
The Nature of Nitrogen-Oxygen Complexes in Silicon
Nitrogen-Oxygen Complexes as Shallow Donors in Silicon Crystals
Complexes of Nitrogen and Point Defects in Silicon

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