Compositional Transformation between Cu Centers by Annealing in Cu-Diffused Silicon Crystals Studied with Deep-Level Transient Spectroscopy and Photoluminescence

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The annealing behavior of Cu centers in Si crystals diffused with Cu at 700 °C has been observed. The center having an energy level at $E_{\text{v}} + 0.07$ eV ($E_{\text{v}}$: top energy of the valence band), denoted as the CuDLB center, showed the dominant component of the as-diffused samples. Two alternative species [denoted as the CuDLA and H(85) centers] were observed by annealing the samples between room temperature and 600 °C. By annealing the samples at 600 °C and above, these alternative centers completely disappeared and the concentration of the CuDLB center almost recovered. From the analysis of the data we drew the following conclusions: The three centers are analogs containing the same core. The CuDLA center is a dissociation product of the CuDLB center; the core of the CuDLA center itself contains one Cu atom. The CuDLB center has a structure consisting of the CuDLA center and three Cui atoms forming weak bonds around the CuDLA center. The H(85) center is an intermediate species between the CuDLA and CuDLB centers.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2009-08-25