Order of the Formation Reaction and the Origin of the Photoluminescence W Center in Silicon Crystal(Semiconductors)
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概要
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The origin of the photoluminescence (PL) W center (or I_I center) in silicon crystal was investigated by observing the change of the PL intensity of the center with implantation fluence for proton-implanted silicon crystals with fluences between 1×10^<11> and 1×10^<16> ion/cm^2 at an energy of 180 keV. The second-order reaction with respect to the fluence was analyzed for the formation of the W center. From the consideration of the symmetry, thermal behaviors and the order of the formation reaction of the W center, the center was determined to be well explained by the <111> split interstitial model.
- 社団法人応用物理学会の論文
- 2001-10-01
著者
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NAKAMURA Minoru
Hitachi Research Laboratory
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Nakamura Minoru
Hitachi Research Laboratory Hitachi Ltd.
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