Reverse Recovery Time of Junction Diodes with High Capture Rate of Minority Carriers in the Low Injection Level

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概要

• 論文の詳細を見る

• The reverse recovery time is calculated using a general expression for the net recombination rate through a recombination center. When the capture rate of minority carriers is high compared to that of majority carriers, the recovery time increases with the injection level even if the condition of low injection level is satisfied. This means that the apparent lifetime obtained from Kingston's relationship is larger than the true value. An approximate equation which relates the recovery time to the injection level is proposed.

• 社団法人応用物理学会の論文
• 1992-06-15

著者

• TOMOKAGE Hajime

  Department of Electronics, Fukuoka University

• MOROOKA Masami

  Department of Electrical Engineering, Fukuoka Institute of Technology

• MIYAMOTO Tokuo

  Department of Electronics, Faculty of Engineering, Fukuoka University

• Tomokage H

  Fukuoka Univ. Fukuoka Jpn

• Tomokage Hajime

  Department Of Electronics Fukuoka University

• Tomokage Hajime

  Department Of Electronics Faculty Of Engineering Fukuoka University

• Tomokage Hajime

  Department Of Electrical Engineering Faculty Of Engineering Kyushu University

• Miyamoto T

  Tokyo Inst. Technol. Tokyo Jpn

• Miyamoto Tokuo

  Department Of Electronics Engineering And Computer Science Faculty Of Engineering Fukuoka University

• 師岡 正美

  福岡工業大学電気工学科

• Morooka Masami

  Department Of Electrical Engineering Fukuoka Institute Of Technology

• YAMAKAWA Tetsuya

  Department of Electronics Engineering, Fukuoka University

• Yamakawa T

  Department Of Electronics Engineering Fukuoka University:(present Address)fujitsu Ltd.

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