Edge Effect on the Determination of Capture Rate of Minority Carriers from Transient Capacitance Measurement
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概要
- 論文の詳細を見る
The depletion edge region must be taken into account in the determination of the capture rate of minority carriers from a transient capacitance after the application of an injection pulse to a reverse-biased pn junction. A simple expression to evaluate the edge effect is proposed, with which the capture rate of minority carriers can be determined if the capture rate of majority carriers is known. Measurements are performed on an Au-doped Si p^+n diode to determine the hole capture rate of the Au acceptor level.
- 社団法人応用物理学会の論文
- 1992-05-15
著者
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TOMOKAGE Hajime
Department of Electronics, Fukuoka University
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MIYAMOTO Tokuo
Department of Electronics, Faculty of Engineering, Fukuoka University
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Tomokage H
Fukuoka Univ. Fukuoka Jpn
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Tomokage Hajime
Department Of Electronics Fukuoka University
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Tomokage Hajime
Department Of Electronics Faculty Of Engineering Fukuoka University
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Tomokage Hajime
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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Miyamoto Tokuo
Department Of Electronics Engineering And Computer Science Faculty Of Engineering Fukuoka University
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Miyamoto Tokuo
Department Of Electronics Engineering Fukuoka Univetsily
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KAMIBAYASHI Hidefumi
Department of Electronics Engineering, Fukuoka Univetsily
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Kamibayashi Hidefumi
Department Of Electronics Engineering Fukuoka Univetsily
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