Asymmetric Coulomb Staircase in a Capacitive Single Electron Transistor with an Asymmetric Bilayer Tunnel Barrier
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概要
- 論文の詳細を見る
Numerical calculations of electrical properties in a capacitive single electron transistor with an asymmetric bilayer tunnel barrier are presented. Our analysis is based on the semiclassical tunnelling model, but the particle tunnel rates through each junction are determined by directly calculating a golden rule equation. The asymmetric Coulomb staircase in the current vs drain voltage characteristics of the system is demonstrated. The current vs gate voltage characteristics of the system are also reported.
- 社団法人応用物理学会の論文
- 1997-10-01
著者
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Nakashima Hiroshi
Department Of Cardiology Nagasaki Citizens Hospital
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魚住 清彦
青山学院大学理工学部
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UOZUMI Kiyohiko
Department of Physics, College of Science and Engineering, Aoyama Gakuin University
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Uozumi Kiyohiko
Department Of Physics College Of Science And Technology Aoyama Gakuin University
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Uozumi Kiyohiko
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Nakashima Hiroshi
Department Of Biology Faculty Of Science Okayama University
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