Blue Light Emission from Silica Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using Triethoxysilane
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概要
- 論文の詳細を見る
Film preparation was carried out by plasma-enhanced chemical vapor deposition using triethoxysilane (TES)/O_2, TES/N_2, and TES/Ar systems. Films deposited at 50℃ showed IR bands due to silica networks and organic groups such as Si-H, Si-OEt and C=O. For the TES/O_2 system, the intensities of the signals due to organic groups decreased with an increase in substrate temperature, resulting in conventional silica spectra above 200℃. The organic groups still remained at 200℃ for films prepared from TES/N_2, and Si-H groups were observed even at 350℃. The films exhibited blue photoluminescence at room temperature. Relative intensity of the photoluminescence was related to IR absorption intensity of the Si-H groups, suggesting that O-Si-H complexes or defects induced by Si-H may be the cause of photoluminescence.
- 社団法人応用物理学会の論文
- 1995-11-15
著者
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Matsui Kazunori
Department Of Chemistry College Of Engineering Kanto Gakuin University
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Shida A
Yokohama City Center For Industrial Technol. And Design Yokohama Jpn
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Shida Azusa
Yokohama City Center For Industrial Technology & Design
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NAKAMURA Tomoyoshi
Department of Chemistry, College of Engineering, Kanto Gakuin University
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Nakamura Tomoyoshi
Department Of Chemistry College Of Engineering Kanto Gakuin University
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