Characterization of a New Cu-Al-Se Phase Grown by Molecular Beam Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-08-15
著者
-
Narusawa Tadashi
Opto-electronics Research Laboratory Semiconductor Research Center Matsushita Electric Industrial Co
-
Narusawa T
Matsushita Res. Inst. Tokyo Kawasaki Jpn
-
MORITA Yoshio
Opto-Electronics Research Laboratory, Semiconductor Research Center, Matsushita Electric Industrial
-
Morita Yoshio
Opto-electronics Research Laboratory Semiconductor Research Center Matsushita Electric Industrial Co
関連論文
- Characterization of a New Cu-Al-Se Phase Grown by Molecular Beam Epitaxy
- Ion-Implantation Induced Damage in Al_xGa_As and Superlattices Studied by Rutherford Backscattering
- Damage Profile in GaAs, AlAs, AlGaAs, and GaAs/AlGaAs Superlattices Induced by Si^+-Ion Implantation
- Formation of a Cu-Al-Se Phase with a Long-Range Order by Molecular Beam Epitaxy
- Characterization of Novel Cu-Al-Se Films Grown by Molecular Beam Epitaxy
- Single-Crystalline Epitaxial ZnS Waveguides for Phase Matched Second Harmonic Generation Devices
- Characterization of CuAlS_2 Films Grown by Molecular Beam Epitaxy
- Preparation and Properties of Single Crystal CuAlSe_2 Film