Preparation and Properties of Single Crystal CuAlSe_2 Film

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概要

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• Epitaxial CuAlSe_2 film has been grown on the GaP (100) substrate by molecular beam epitaxy, and its optical and electrical properties have been characterized. The spectrum of optical reflectance suggests that the band gap of the film is about 2.7 eV, which agrees with that of the bulk material. The photoluminescence spectrum at 77K showed no band edge emission, but only deep level-related emissions ranging from 520 nm to 870 nm. The CuAlSe_2 sample exhibits n-type conductivity with the resistivity of 0.02Ω cm, the carrier concentration of 4×10^<18> cm^<-3> and the mobility of 60 cm^2・V^<-1>・s^<-1>.

• 社団法人応用物理学会の論文
• 1991-07-15

著者

• Narusawa Tadashi

  Opto-electronics Research Laboratory Semiconductor Research Center Matsushita Electric Industrial Co

• Morita Yoshio

  Opto-electronics Research Laboratory Semiconductor Research Center Matsushita Electric Industrial Co

• Morita Yoshio

  Opto-electronics Research Laboratory Semiconductor Research Center Matsushita Electric Industrial Co

• Narusawa Tadashi

  Opto-electronics Research Laboratory Semiconductor Research Center Matsushita Electric Industrial Co

関連論文

• Characterization of a New Cu-Al-Se Phase Grown by Molecular Beam Epitaxy
• Formation of a Cu-Al-Se Phase with a Long-Range Order by Molecular Beam Epitaxy
• Characterization of Novel Cu-Al-Se Films Grown by Molecular Beam Epitaxy
• Single-Crystalline Epitaxial ZnS Waveguides for Phase Matched Second Harmonic Generation Devices
• Characterization of CuAlS_2 Films Grown by Molecular Beam Epitaxy
• Preparation and Properties of Single Crystal CuAlSe_2 Film

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