Characterization of CuAlS_2 Films Grown by Molecular Beam Epitaxy

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概要

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• Undoped and As-doped CuAlS_2 films have been grown on GaAs(100) substrates by molecular beam epitaxy, and their optical and electrical properties have been characterized. X-ray diffraction patterns show that the films grow epitaxially with the c-axis perpendicular to the substrate surface. Both undoped and As-doped CuAlS_2 films have exhibited a near-band-edge emission around 3.4 eV with accompanying deep-level-related emissions at 77 K. An As-doped CuAlS_2 film exhibits p-type conductivity with the lowest resistivity of 1 Ω・cm and the carrier concentration of 5×10^<17> cm^<-3>.

• 社団法人応用物理学会の論文
• 1992-10-01

著者

• Narusawa Tadashi

  Opto-electronics Research Laboratory Semiconductor Research Center Matsushita Electric Industrial Co

• Morita Yoshio

  Opto-electronics Research Laboratory Semiconductor Research Center Matsushita Electric Industrial Co

• Morita Yoshio

  Opto-electronics Research Laboratory Semiconductor Research Center Matsushita Electric Industrial Co

• Narusawa Tadashi

  Opto-electronics Research Laboratory Semiconductor Research Center Matsushita Electric Industrial Co

関連論文

• Characterization of a New Cu-Al-Se Phase Grown by Molecular Beam Epitaxy
• Formation of a Cu-Al-Se Phase with a Long-Range Order by Molecular Beam Epitaxy
• Characterization of Novel Cu-Al-Se Films Grown by Molecular Beam Epitaxy
• Single-Crystalline Epitaxial ZnS Waveguides for Phase Matched Second Harmonic Generation Devices
• Characterization of CuAlS_2 Films Grown by Molecular Beam Epitaxy
• Preparation and Properties of Single Crystal CuAlSe_2 Film

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