Pulsed Laser Deposition of Low-Resistivity Indium Tin Oxide Thin Films at Low Substrate Temperature

概要

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Indium tin oxide (ITO) thin films were grown on SiO_2 glass and silicon (Si) substrates from a 95 wt% In_2O_3-5wt% SnO_2 sintered ceramic target by pulsed laser deposition (PLD). The films were deposited under different oxygen pressures (P_<o2>) of 5×10^<-3> to 5×10^<-3> Torr at room temperature (RT) and 200℃. P_<o2> was found to have a critical influence on the optical and the electrical properties of the ITO films. Under a P_<o2> of 1×10-<-2> Torr, ITO films with resistivity as low as 4.5×10^<-4> and 1.8×10^<-4> Ωcm were obtained on glass at RT and 200℃, respectively. Moreover, by increasing the substrate temperature (T_s) to 350℃, the resistivity was further reduced to 1.3×10^<-4>Ωcm. Optical transmittance in visible light greater than 85% was attained in all the films deposited under P_<o2> above 5×10^<-3> Torr. However, a reduction in the transmittance to less than 80% was observed as P_<o2> decreased. The films deposited at RT were amorphous, whereas those produced at 200℃ were polycrystalline.
社団法人応用物理学会の論文
1999-05-15