Pulsed Laser Deposition of Crystalline Indium Tin Oxide Films at Room Temperature by Substrate Laser Irradiation
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概要
- 論文の詳細を見る
Crystalline tin(Sn)-doped indium oxide(ITO)films grown at room temperature(RT)using pulsed laser deposition(PLD)coupled with laser irradiation of the growing films are discussed. The energy of the laser irradiation beam was 〜0.07 J・cm^<-2>. The films were deposited from Sn-doped(0-10wt%)In_2O_3 targets under oxygen pressure(Po_2)of 10^<-2> Torr. At RT, the laserirradiated and nonirradiated portions of the films yielded resistivities of 〜1.2 × 10^<-4> and 〜2.5 × 10^<-4> Ω・cm, respectively. At 200°C, a resistivity of 8.9 × 10^<-5> Ω・cm was observed for the laser-irradiated part of the ITO films.
- 社団法人応用物理学会の論文
- 2000-04-15
著者
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MURAI Kensuke
Osaka National Research Institute
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ISHIHARA Tsuguo
Hyogo Prefectural Institute of Industrial Research
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Motoyama Muneyuki
Hyogo Prefectural Institute of Industrial Research
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Adurodija F
Hyogo Prefectural Inst. Industrial Res. (hpiir) Kobe Jpn
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Adurodija Fredetick
Hyogo Prefectural Institute Of Industrial Research(hpiir)
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Yoshioka H
Hyogo Prefectural Institute Of Industrial Research(hpiir)
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Adurodija Frederick
Hyogo Prefectural Institute Of Industrial Research(hpiir)
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IZUMI Hirokazu
Hyogo Prefectural Institute of Industrial Research(HPIIR)
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YOSHIOKA Hideki
Hyogo Prefectural Institute of Industrial Research(HPIIR)
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Izumi H
Hyogo Prefectural Institute Of Industrial Research(hpiir)
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Yoshioka Hideki
Hyogo Prefectural Institute Of Industrial Research
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Ishihara T
Hyogo Prefectural Institute Of Industrial Research(hpiir)
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Motoyama M
Hyogo Prefectural Inst. Industrial Res. Kobe Jpn
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Ishihara T
Hyogo Prefectural Institute Of Industrial Research
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