Warp of Czochralski Wafer with Back-Surface Polycrystalline Silicon Film
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概要
- 論文の詳細を見る
Warp of Czochralski (CZ) Si wafers with back-surface polycrystalline silicon (BPS) film was measured with elevation of ambient temperature to 620-680℃, using a film internal stress meter (ULVAC Corporation FIS-1000). For the first time, to the aurthors' knowledge, it was clarified that the wafers were warped because of film-induced stress occurring at the film deposition temperature. Film-induced stress is divided into temperature-dependent stress (thermal stress) and residual stress at room temperature. Thermal stress is quantified under the assumption that warp depends on the apparent linear thermal expansion coefficients of the BPS film. Residual stress was measured by means of the X-ray diffraction method.
- 社団法人応用物理学会の論文
- 1993-09-15
著者
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Suga H
Mitsubishi Materials Silicon Corp. Chiba Jpn
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Sugihara T
Central Research Institute Mitsubishi Materials Co. Ltd.
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Miyairi H
Kogakuin Univ. Tokyo Jpn
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SUGAWARA Tamotsu
Central Research Institute, Mitsubishi Materials Co., Ltd.
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TSUCHIYA Shin
Central Research Institute
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Suga Hisaaki
Evaluation Technology Department Mitsubishi Materials Silicon Corporation
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Tsuchiya S
Yamagata Univ. Yamagata Jpn
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Yoshioka H
Hyogo Prefectural Institute Of Industrial Research(hpiir)
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Miyairi Hiroo
Evaluation Technology Department Mitsubishi Materials Silicon Corporation
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YOSHIOKA Hideo
Evaluation Technology Department, Mitsubishi Materials Silicon Corporation
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