Tsuchiya S | Yamagata Univ. Yamagata Jpn

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概要

• 同名の論文著者
• Yamagata Univ. Yamagata Jpnの論文著者

関連著者

• Sugihara T

  Central Research Institute Mitsubishi Materials Co. Ltd.

• Tsuchiya S

  Yamagata Univ. Yamagata Jpn

• Komatsu Ryuichi

  Central Research Institute Mitsubishi Materials Co. Ltd.

• SUGAWARA Tamotsu

  Central Research Institute, Mitsubishi Materials Co., Ltd.

• KOMATSU Ryuichi

  Faculty of Engineering, Yamaguchi University

• Sugawara T

  Central Research Institute Mitsubishi Materials Co. Ltd.

• Komatsu R

  Faculty Of Engineering Yamaguchi University

• Uda S

  Electronics Device R&d Center Mitsubishi Materials Corporation

• Uda Satoshi

  Electrnics Device R&d Center Mitsubishi Material Co. Ltd.

• UDA Satoshi

  Central Research Institute, Mitsubishi Materials Co., Ltd.

• Uda Satoshi

  Central Research Institute Cyberspace Lab. Mitsubishi Materials Co. Ltd.

• SUGIHARA Tadashi

  Central Research Institute, Mitsubishi Materials Corporation

• Yamaguchi Kunio

  Electronics Technology Research Center Mitsubishi Materials Co. Ltd.

• VEZIN Vincent

  Central Research Institute, Mitsubishi Materials Co., Ltd.

• YAMANOUCHI Kazuhiko

  Research Institute of Electrical Communication, Tohoku University

• TSUCHIYA Shin

  Central Research Institute

• Vezin Vincent

  Central Research Institute Mitsubishi Materials Co. Ltd.

• UDA Satoshi

  Advanced Products Division, Mitsubishi Materials Corporation

• Vezin V

  Tokyo Univ. Agriculture And Technol. Tokyo Jpn

• Yamanouchi Kazuhiko

  Research Institute Of Electrical Communication Tohoku University

• Suga H

  Mitsubishi Materials Silicon Corp. Chiba Jpn

• Miyairi H

  Kogakuin Univ. Tokyo Jpn

• INUI Shinichiro

  Electronics Technology Research Center, Mitsubishi Materials Co., Ltd.

• KOMATSU Ryuichi

  Research Institute of Electrical Communication, Tohoku University

• SASSA Kouichi

  Central Research Institute

• Suga Hisaaki

  Evaluation Technology Department Mitsubishi Materials Silicon Corporation

• Yoshioka H

  Hyogo Prefectural Institute Of Industrial Research(hpiir)

• Inui Shinichiro

  Electronics Technology Research Center Mitsubishi Materials Co. Ltd.

• Yamaguchi Kunio

  Electrnics Device R&d Center Mitsubishi Material Co. Ltd.

• Miyairi Hiroo

  Evaluation Technology Department Mitsubishi Materials Silicon Corporation

• YOSHIOKA Hideo

  Evaluation Technology Department, Mitsubishi Materials Silicon Corporation

• Komatsu Ryuichi

  Research Division, Chugai Pharmaceutical Co., Ltd., Japan

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著作論文

• Factors Influencing the Variation of Surface Acoustic Wave Velocity in Lithium Tetraborate
• Consideration of Small Variation of Surface Acoustic Wave (SAW) Velocity in Lithium Tetraborate
• Mode of Occurrence and Cause of Twinning in Lithium Tetraborate Grown by Czocharalski Method
• Growth of Crack-Free 3-Inch-Diameter Lithium Tetraborate Single Crystals by Czochralski Method ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
• Growth of 3-Inch-Diameter Li_2B_4O_7 Single Crystal Using the Resistance Heating Furnace ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
• Nonlinear Optical Properties of Langasite Crystal
• Characterization of Defects in Li_2B_4O_7 Crystals Grown by Czochralski and Bridgman Methods
• Warp of Czochralski Wafer with Back-Surface Polycrystalline Silicon Film

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