Yoshimi Makoto | Ulsi Research Laboratories R&d Center Toshiba Corporation

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概要

• 同名の論文著者
• Ulsi Research Laboratories R&d Center Toshiba Corporationの論文著者

関連著者

• ARISUMI Osamu

  ULSI Research Laboratories, R & D Center, Toshiba Corporation

• TERAUCHI Mamoru

  ULSI Research Laboratories, R & D Center, Toshiba Corporation

• Yoshimi Makoto

  Ulsi Research Laboratories R&d Center Toshiba Corporation

• Nishiyama Akira

  Ulsi Research Laboratories R & D Center Toshiba Corporation

• Matsuzawa Kazuya

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

• Matsuzawa Kazuya

  Ulsi Research Laboratories R & D Center Toshiba Corporation

• Nishiyama A

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Arisumi Osamu

  Feram Development Alliance Semiconductor Company Toshiba Corp.

• SHIGYO Naoyuki

  ULSI Research Laboratories, R & D Center, Toshiba Corporation

• NISHIYAMA Akira

  ULSI Research Laboratories, R & D Center, Toshiba Corporation

• YOSHIMI Makoto

  ULSI Research Laboratories, R & D Center, Toshiba Corporation

• Shigyo Naoyuki

  Ulsi Research Laboratories R & D Center Toshiba Corporation

• Shigyo Naoyuki

  Ulsi Device Engineering Laboratory Toshiba Corporation

• Yoshimi Makoto

  Advanced Semiconductor Devices Research Laboratories Toshiba Corporation

• Yoshimi M

  R&d Center Kawasaki‐shi Jpn

• Terauchi M

  Advanced Semiconductor Devices Research Laboratories Toshiba Corporation

• Terauchi Mamoru

  ULSI Research Laboratories, R&D Center, Toshiba Corporation,

• Takeno Shiroh

  Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

• Suzuki Ken

  Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

• Takakuwa Chie

  Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

• Arisumi Osamu

  ULSI Research Laboratories, R&D Center, Toshiba Corporation,

• Nishiyama Akira

  ULSI Research Laboratories, R&D Center, Toshiba Corporation,

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著作論文

• Analysis of Si-Ge Source Structure in 0.15 μm SOI MOSFETs Using Two-Dimensional Device Simulation
• Analysis of Si-Ge Source Structure in 0.15μm SOI MOSFETs Using Two-Dimensional Device Simulation
• Formation of SiGe Source/Drain Using Ge Implantation for Floating-Body Effect Resistant SOI MOSFETs

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