Shigyo Naoyuki | Ulsi Device Engineering Laboratory Toshiba Corporation

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概要

• SHIGYO Naoyukiの詳細を見る
• 同名の論文著者
• Ulsi Device Engineering Laboratory Toshiba Corporationの論文著者

関連著者

• Shigyo Naoyuki

  Ulsi Device Engineering Laboratory Toshiba Corporation

• SHIGYO Naoyuki

  ULSI Research Laboratories, R & D Center, Toshiba Corporation

• Matsuzawa Kazuya

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

• Matsuzawa Kazuya

  Ulsi Research Laboratories R & D Center Toshiba Corporation

• Nishiyama A

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Arisumi Osamu

  Feram Development Alliance Semiconductor Company Toshiba Corp.

• ARISUMI Osamu

  ULSI Research Laboratories, R & D Center, Toshiba Corporation

• TERAUCHI Mamoru

  ULSI Research Laboratories, R & D Center, Toshiba Corporation

• NISHIYAMA Akira

  ULSI Research Laboratories, R & D Center, Toshiba Corporation

• YOSHIMI Makoto

  ULSI Research Laboratories, R & D Center, Toshiba Corporation

• Shigyo Naoyuki

  Ulsi Research Laboratories R & D Center Toshiba Corporation

• Yoshimi Makoto

  Advanced Semiconductor Devices Research Laboratories Toshiba Corporation

• Yoshimi M

  R&d Center Kawasaki‐shi Jpn

• Terauchi M

  Advanced Semiconductor Devices Research Laboratories Toshiba Corporation

• Yoshimi Makoto

  Ulsi Research Laboratories R&d Center Toshiba Corporation

• ENDA Toshiyuki

  ULSI Device Engineering Laboratory, Toshiba Corporation

• Matsuoka Fumitomo

  Ulsi Device Engineering Laboratory Toshiba Corporation

• Nishiyama Akira

  Ulsi Research Laboratories R & D Center Toshiba Corporation

• Koike Hidetoshi

  Ulsi Device Engineering Laboratory Toshiba Corporation

• SATAKE Hideki

  ULSI Research Laboratories, TOSHIBA Corporation

• Satake H

  Toshiba Corp. Kawasaki Jpn

• Shigyo Naoyuki

  Ulsi Research Center Toshiba Corporation

• KOIKE Hidetoshi

  ULSI Device Engineering Laboratory, Toshiba Corporation

• MATSUOKA Fumitomo

  ULSI Device Engineering Laboratory, Toshiba Corporation

• Enda T

  Toshiba Corp Yokohama Jpn

• KONISHI Noritoshi

  ULSI Research Center, TOSHIBA CORPORATION

• Konishi Noritoshi

  Ulsi Research Center Toshiba Corporation

• SATAKE Hideki

  ULSI Research Center, TOSHIBA CORPORATION

• Matsuoka Fumitomo

  ULSI Device Engineering Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-0032, Japan

• Shigyo Naoyuki

  ULSI Device Engineering Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-0032, Japan

• Koike Hidetoshi

  ULSI Device Engineering Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-0032, Japan

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著作論文

• Analysis of Si-Ge Source Structure in 0.15 μm SOI MOSFETs Using Two-Dimensional Device Simulation
• Analysis of Si-Ge Source Structure in 0.15μm SOI MOSFETs Using Two-Dimensional Device Simulation
• Counter-Doped Surface Channel Metal-Oxide-Semiconductor Field-Effect Transistor with High Current Drivability and Steep Subthreshold Slope
• An Improved Bandgap Narrowing Model Based on Corrected Intrinsic Carrier Concentration
• Counter-Doped Surface Channel Metal-Oxide-Semiconductor Field-Effect Transistor with High Current Drivability and Steep Subthreshold Slope

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