Counter-Doped Surface Channel Metal-Oxide-Semiconductor Field-Effect Transistor with High Current Drivability and Steep Subthreshold Slope
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-10-15
著者
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SHIGYO Naoyuki
ULSI Research Laboratories, R & D Center, Toshiba Corporation
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Shigyo Naoyuki
Ulsi Device Engineering Laboratory Toshiba Corporation
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KOIKE Hidetoshi
ULSI Device Engineering Laboratory, Toshiba Corporation
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ENDA Toshiyuki
ULSI Device Engineering Laboratory, Toshiba Corporation
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MATSUOKA Fumitomo
ULSI Device Engineering Laboratory, Toshiba Corporation
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Enda T
Toshiba Corp Yokohama Jpn
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Matsuoka Fumitomo
Ulsi Device Engineering Laboratory Toshiba Corporation
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Koike Hidetoshi
Ulsi Device Engineering Laboratory Toshiba Corporation
関連論文
- Analysis of Si-Ge Source Structure in 0.15 μm SOI MOSFETs Using Two-Dimensional Device Simulation
- Analysis of Si-Ge Source Structure in 0.15μm SOI MOSFETs Using Two-Dimensional Device Simulation
- Counter-Doped Surface Channel Metal-Oxide-Semiconductor Field-Effect Transistor with High Current Drivability and Steep Subthreshold Slope
- An Improved Bandgap Narrowing Model Based on Corrected Intrinsic Carrier Concentration
- Counter-Doped Surface Channel Metal-Oxide-Semiconductor Field-Effect Transistor with High Current Drivability and Steep Subthreshold Slope