Counter-Doped Surface Channel Metal-Oxide-Semiconductor Field-Effect Transistor with High Current Drivability and Steep Subthreshold Slope

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概要

• 論文の詳細を見る

• A metal-oxide-semiconductor field-effect transistor (MOSFET) with a novel channel structure called a counter-doped surface channel (CDSC) is proposed. A unique characteristic of the CDSC MOSFET is that the channel current still exists at the surface, even though the counter-doped layer is formed. Experimental results confirm that the CDSC pMOSFET using an n+ poly-Si gate has the highest current drivability and the steepest subthreshold slope while maintaining a good short-channel-effect immunity compared with the surface channel (SC) and buried channel (BC) pMOSFET. The delay time with the CDSC pMOSFET represents 1.34-fold improvement in comparison to that with the SC pMOSFET.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1998-10-15

著者

• Shigyo Naoyuki

  Ulsi Device Engineering Laboratory Toshiba Corporation

• ENDA Toshiyuki

  ULSI Device Engineering Laboratory, Toshiba Corporation

• Matsuoka Fumitomo

  Ulsi Device Engineering Laboratory Toshiba Corporation

• Koike Hidetoshi

  Ulsi Device Engineering Laboratory Toshiba Corporation

• Matsuoka Fumitomo

  ULSI Device Engineering Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-0032, Japan

• Shigyo Naoyuki

  ULSI Device Engineering Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-0032, Japan

• Koike Hidetoshi

  ULSI Device Engineering Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-0032, Japan

関連論文

• Analysis of Si-Ge Source Structure in 0.15 μm SOI MOSFETs Using Two-Dimensional Device Simulation
• Analysis of Si-Ge Source Structure in 0.15μm SOI MOSFETs Using Two-Dimensional Device Simulation
• Counter-Doped Surface Channel Metal-Oxide-Semiconductor Field-Effect Transistor with High Current Drivability and Steep Subthreshold Slope
• An Improved Bandgap Narrowing Model Based on Corrected Intrinsic Carrier Concentration
• Counter-Doped Surface Channel Metal-Oxide-Semiconductor Field-Effect Transistor with High Current Drivability and Steep Subthreshold Slope

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