An Improved Bandgap Narrowing Model Based on Corrected Intrinsic Carrier Concentration

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概要

• 論文の詳細を見る
• 1992-02-25

著者

• SATAKE Hideki

  ULSI Research Laboratories, TOSHIBA Corporation

• Satake H

  Toshiba Corp. Kawasaki Jpn

• Shigyo Naoyuki

  Ulsi Device Engineering Laboratory Toshiba Corporation

• Shigyo Naoyuki

  Ulsi Research Center Toshiba Corporation

• KONISHI Noritoshi

  ULSI Research Center, TOSHIBA CORPORATION

• Konishi Noritoshi

  Ulsi Research Center Toshiba Corporation

• SATAKE Hideki

  ULSI Research Center, TOSHIBA CORPORATION

関連論文

• Two Correlated Mechanisms in Thin SiO_2 Breakdown
• Reliability of Structurally Modified Ultra-Thin Gate Oxides
• Analysis of Si-Ge Source Structure in 0.15 μm SOI MOSFETs Using Two-Dimensional Device Simulation
• Analysis of Si-Ge Source Structure in 0.15μm SOI MOSFETs Using Two-Dimensional Device Simulation
• Counter-Doped Surface Channel Metal-Oxide-Semiconductor Field-Effect Transistor with High Current Drivability and Steep Subthreshold Slope
• An Improved Bandgap Narrowing Model Based on Corrected Intrinsic Carrier Concentration
• Counter-Doped Surface Channel Metal-Oxide-Semiconductor Field-Effect Transistor with High Current Drivability and Steep Subthreshold Slope

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