SiO_2 Tapered Etching Employing Magnetron Discharge of Fluorocarbon Gas

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概要

• 論文の詳細を見る

• SiO_2 tapered etching has been studied with special emphasis on the substrate temperature. A tapered etching profile was formed accompanying a polymer deposition on the side wall, and a high etching rate was obtained by lowering the substrate temperature. The polymer film deposited on the side wall was easily removed together with photoresist by O_2 plasma ashing to yield a very smooth side wall in the via hole without any residual films. Experiments on polymer deposition revealed that the polymerization at as low a temperature as -70℃ gives a fluorine-rich polymer film with poor durability in a plasma environment, and the etchants for SiO_2 are released by ion bombardments at the interface between the polymer and the underlying SiO_2 to enhance SiO_2 etching.

• 社団法人応用物理学会の論文
• 1992-02-15

著者

• HORIOKA Keiji

  The Institute of Scientific and Industrial Research, Osaka University

• Arikado T

  Semiconductor Leading Edge Technologies Inc.

• Okano H

  Applied Materials Japan Inc. Chiba Jpn

• Okano Haruo

  Ulsi Research Center Toshiba Corp.

• Horioka Keiji

  Ulsi Research Laboratories Research And Development Center Toshiba Corporation

• Ohiwa T

  Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation

• OHIWA Tokuhisa

  ULSI Research Center, Toshiba Corporation

• ARIKADO Tsunetoshi

  ULSI Research Center, Toshiba Corporation

• HASEGAWA Isahiro

  MOS Process Engineering Department, Toshiba Corp.

• Hasegawa Isahiro

  Mos Process Engineering Department Toshiba Corp.

• Arikado Tunetoshi

  Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation

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