Characteristics of(Ba, Sr)TiO_3 Capacitors with Textured Ru Bottom Electrode

概要

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Ru films were fabricated by dc magnetron sputtering in an Ar/O_2 mixture ambient in order to examine the Ru films as electrodes of Ba_<0.5>Sr_<0.5>TiO_3(BST)thin-film capacitors. The 100-nm-thick Ru film deposited on Si at 450°C at an O_2/(Ar+O_2)flow ratio of 40% at 0.5kW was textured along c-axis. The full-width at half maximum(FWHM)of 3.14°was obtained for the Ru(002)diffraction peak in an X-ray diffraction(XRD)pattern. BST films deposited on the Ru bottom electrode were also textured along(110). The relative dielectric constant of BST films increased with a decrease in the FWHM of BST(110). The relationship between electrical properties of Ru/BST/Ru capacitors and the orientation of the Ru bottom electrode and BST films was also investigated.
社団法人応用物理学会の論文
2000-11-15