Ferroelectric Properties of Pb(Zi, Ti)O_3 Capacitor with Thin SrRuO_3 Films within Both Electrodes
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-30
著者
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Hidaka Osamu
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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Yamakawa Kouji
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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Arisumi Osamu
Feram Development Alliance Semiconductor Company Toshiba Corp.
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Kanaya Hiroyuki
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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MORIMOTO Toyota
Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation
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ARISUMI Osamu
Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation
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IWAMOTO Tsuyoshi
Corporate Manufacturing Engineering Center, Toshiba Corporation
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KUMURA Yoshinori
Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation
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KUNISHIMA Iwao
Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation
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TANAKA Shin-ichi
Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation
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Morimoto Toyota
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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Kumura Yoshinori
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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Kunishima Iwao
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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Iwamoto Tsuyoshi
Corporate Manufacturing Engineering Center Toshiba Corporation
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Tanaka Shin-ichi
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
関連論文
- Novel Pb(Ti,Zr)O_3(PZT) Crystallization Technique Using Flash Lamp for Ferroelectric RAM (FeRAM) Embedded LSIs and One Transistor Type FeRAM Devices
- Novel PZT Crystallization Technique by Using Flash Lamp for FeRAM Embedded LSIs and 1Tr FeRAM Devices
- Analysis of Si-Ge Source Structure in 0.15 μm SOI MOSFETs Using Two-Dimensional Device Simulation
- Analysis of Si-Ge Source Structure in 0.15μm SOI MOSFETs Using Two-Dimensional Device Simulation
- Ferroelectric Properties of Pb(Zi, Ti)O_3 Capacitor with Thin SrRuO_3 Films within Both Electrodes
- Lead Content Control in (Pb, La)(Zr, Ti)O3 Films Using Ar/O2 Sequential Rapid Thermal Process