Properties of High-Performance Porous SiOC Low-k Film Fabricated Using Electron-Beam Curing
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-06-15
著者
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Yoda Tadashi
Department Of Electronic Science And Engineering Kyoto University
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Fujita Keiji
Advanced Ulsi Process Engineering Department Process & Manufacturing Engineering Center Toshiba
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YODA Takashi
Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Co
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MIYAJIMA Hideshi
Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Co
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NAKATA Rempei
Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Co
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MIYASHITA Naoto
Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Co
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HAYASAKA Nobuo
Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Co
関連論文
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- High-Performance SiOF Film Fabricated Using a Dual-Frequency-Plasma Chemical Vapor Deposition system
- High-Performance Low-k Dielectric Using Advanced EB-Cure Process
- High-Performance SiOF Film Fabricated Using a Dual-Frequency-Plasma Chemical Vapor Deposition system
- Properties of High-Performance Porous SiOC Low-$k$ Film Fabricated Using Electron-Beam Curing
- Submolecular-Resolution Studies on Metal-Phthalocyanines by Noncontact Atomic Force Microscopy
- Structural Studies of High-Performance Low-$k$ Dielectric Materials Improved by Electron-Beam Curing