Fluorine Doped SiO_2 for Low Dielectric Constant Films in Sub-Half Micron ULSI Multilevel Interconnection
スポンサーリンク
概要
- 論文の詳細を見る
- 1995-08-21
著者
-
Katsumata R
Toshiba Corp. Kawasaki Jpn
-
Katsumata Ryota
Advanced Semiconductor Devices Research Labs. R&d Center Toshiba Corp.
-
HAYASAKA Nobuo
ULSI Research Center, Toshiba Corp.
-
MIYAJIMA Hideshi
Microelectronics Engineering Lab., Toshiba Corp.
-
HAYASAKA Nobuo
Microelectronics Engineering Lab., Toshiba Corp.
-
NAKASAKI Yasushi
ULSI Research Labs., R & D Center, Toshiba Corp.
-
KATSUMATA Ryota
ULSI Research Labs., R & D Center, Toshiba Corp.
-
MIYAJIMA Hideshi
ULSI Research Laboratories, Research & Development Center, Toshiba Corporation
-
Hayasaka N
Microelectronics Engineering Lab. Toshiba Corp.
-
Hayasaka Nobuo
Ulsi Research Center Toshiba Corp.
-
Nakasaki Y
Advanced Semiconductor Devices Research Labs. R&d Center Toshiba Corp.
-
Miyajima H
Seiko Epson Corp. Nagano Jpn
-
Katsumata Ryota
ULSI Research Labs. R & D Center, Toshiba Corp.
-
Nakasaki Yasushi
ULSI Research Labs. R & D Center, Toshiba Corp.
関連論文
- Temperature Anisotropy Measurement Using Diamagnetic Loop Array
- Pitch-Angle Measurement of Ions by the Use of a Small Faraday Cup
- Suppression of Alfven Ion Cyclotron Instability in a Mirror by End Plugging
- Interchange Stability Criteria for Anisotropic Central-Cell Plasmas in the Tandem Mirror GAMMA 10
- Density Fluctuations Associated with Electromagnetic Waves in Ion Cyclotron Range of Frequencies
- Mechanism of Corrosion in Al-Si-Cu
- In Situ Transmission Electron Microseopy Observation of Single Crystallization of Filled Aluminum Interconnection
- Formation of Single-Crystal Al Interconnection by In Situ Annealing
- Ab Initio Molecular Orbital Study of Suppression of Water Absorption and Hydrolysis(F-Removal)of Chemical-Vapor-Deposited SiOF Films by Nitrogen Doping
- Ab initio Molecular Orbital Study of Water Absorption and Hydrolysis of Chemical Vapor Deposited SiOF Films II
- Ab initio Molecular Orbital Study of Water Absorption and Hydrolysis of Chemical Vapor Deposited SiOF Films I
- Water Absorption Properties of Fluorine-Doped SiO_2 Films Using Plasma-Enhanced Chemical Vapor Deposition
- Fluorine Doped SiO_2 for Low Dielectric Constant Films in Sub-Half Micron ULSI Multilevel Interconnection
- Significant Effect of OH inside Silicon Chemical Oxides on AHF(Anhydrous Hydrofluoric Acid) Etching