A New High-Density Plasma Etching System Using A Dipole-Ring Magnet

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概要

• 論文の詳細を見る

• A new high-density plasma etching system has been developed using a dipole-ring magnet (DRM). The system utilizes a parallel magnetic field up to 600 G with excellent uniformity extending over 250 mm in diameter. The nonuniformity of plasma was compared with that of a conventional permanent-magnet-enhanced plasma using a gate oxide integrity test. The plasma generated using DRM produced no gate oxide degradation, while the conventional magnetron plasma produced some gate oxide degradation under the most highly accelerated conditions. Si etch rate is shown to depend strongly on magnetic field strength, increasing from 1.3 μm/min at 120 G to 2.1 μm/min at 600 G.

• 社団法人応用物理学会の論文
• 1995-11-15

著者

• HORIOKA Keiji

  The Institute of Scientific and Industrial Research, Osaka University

• Okano H

  Applied Materials Japan Inc. Chiba Jpn

• Okano Haruo

  Ulsi Research Center Toshiba Corp.

• Horioka Keiji

  Ulsi Research Laboratories Research And Development Center Toshiba Corporation

• Sekine M

  Association Of Super-advanced Electronics Technologies (aset):(present Address)process & Manufac

• Narita M

  Akita Univ. Akita Jpn

• Yoshida Y

  Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)

• SEKINE Makoto

  ULSI Device Development Division, NEC Corporation

• NARITA Masaki

  ULSI Research Laboratories, Research and Development Center, Toshiba Corporation

• YOSHIDA Yukimasa

  Semiconductor Manufacturing Engineering Center, Semiconductor Division, Toshiba Corporation

• Sekine Makoto

  Ulsi Device Development Division Nec Corporation

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