Dual Damascene Interconnect Technology for 130-nm-node Complementary Metal-Oxide-Semiconductor Devices Using Ladder-Oxide Film
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-09-15
著者
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Horiuchi Tadahiko
ULSI Device Development Lab., NEC Corporation
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Oda Noriaki
Nec Electronics Corp. Kawasaki‐shi Jpn
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Horiuchi Tadahiko
Nec Electronics Corporation
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Horiuchi Tadahiko
Ulsi Device Development Lab. Nec Corporation
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YOKOYAMA Takashi
ULSI Device Development Laboratories, NEC Corporation
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USAMI Tatsuya
ULSI Device Development Laboratories, NEC Corporation
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USAMI Tatsuya
NEC Electronics Corporation
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WATANABE Susumu
NEC Electronics Corporation
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Usami Tatsuya
Ulsi Device Development Laboratories Nec Corporation
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Nagahara Seiji
Ulsi Device Development Division Nec Corporation
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SHIBA Kazutoshi
ULSI Device Development Division, NEC Corporation
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NISHIZAWA Atsushi
ULSI Device Development Division, NEC Corporation
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YAMATO Hidekazu
Production Control Division, NEC Corporation
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WATANABE Susumu
ULSI Device Development Division, NEC Corporation
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NAKABEPPU Kenichi
ULSI Device Development Division, NEC Corporation
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KUNIMUNE Yorinobu
ULSI Device Development Division, NEC Corporation
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SEKINE Makoto
ULSI Device Development Division, NEC Corporation
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ODA Noriaki
ULSI Device Development Division, NEC Corporation
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Shiba K
Nec Electronics Corporation
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Shiba Kazutoshi
Ulsi Device Development Division Nec Corporation
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Oda Noriaki
Ulsi Device Development Division Nec Corporation
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Nakabeppu Kenichi
Ulsi Device Development Division Nec Corporation
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Nishizawa Atsushi
Ulsi Device Development Division Nec Corporation
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Kunimune Yorinobu
Ulsi Device Development Division Nec Corporation
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Sekine Makoto
Ulsi Device Development Division Nec Corporation
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Yamato Hidekazu
Production Control Division Nec Corporation
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Yokoyama Takashi
Ulsi Device Development Division Nec Corporation
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