Capacitance Coupling Immune, Transient Sensitive Accelerator for Resistive Interconnect Signals of Subquarter Micron ULSI

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概要

• 論文の詳細を見る
• 1996-07-25

著者

• Horiuchi Tadahiko

  ULSI Device Development Lab., NEC Corporation

• Horiuchi Tadahiko

  Ulsi Device Development Lab. Nec Corporation

• Horiuchi Tadahiko

  Ulsi Device Development Laboratories Nec Corporation Nec Corporation

• Yamashina Masakazu

  The Microelectronics Research Laboratories

• Mizuno Masayuki

  The Microelectronics Research Laboratories Nec Corporation

• IIMA Tomofumi

  the Microelectronics Research Laboratories, NEC Corporation

• Iima Tomofumi

  The Microelectronics Research Laboratories Nec Corporation

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• Dual Damascene Interconnect Technology for 130-nm-node Complementary Metal-Oxide-Semiconductor Devices Using Ladder-Oxide Film
• A Precise SOI Film Thickness Measurement Including Gate Depletion and Quantum Effects
• Sensitivity Coefficients of Pirani Gauge for Various Atoms and Molecules
• Capacitance Coupling Immune, Transient Sensitive Accelerator for Resistive Interconnect Signals of Subquarter Micron ULSI

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