Two-Dimensional Dopant Profiling of nMOSFETs with Shallow-Extensions Using Electrochemical Etching Technique
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概要
- 論文の詳細を見る
- 1999-09-20
著者
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Mineji A
Nec Electronics Corp. Kanagawa Jpn
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KUNIMUNE Yorinobu
ULSI Device Development Division, NEC Corporation
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NISHIO Naoharu
ULSI Device Development Laboratories, NEC Corporation
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KIKUCHI Hiroaki
ULSI Device Development Laboratories, NEC Corporation
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MINEJI Akira
ULSI Device Development Laboratories, NEC Corporation
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YAMAGUCHI Kensuke
ULSI Device Development Laboratories, NEC Corporation
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Yamaguchi Kensuke
Ulsi Device Development Laboratory Nec Corporation
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Yamaguchi Kensuke
Ulsi Device Development Laboratories Nec Corporation
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Kunimune Y
Nec Corp. Kanagawa Jpn
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Kunimune Yorinobu
Ulsi Device Development Division Nec Corporation
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Kikuchi Hiroaki
Ulsi Device Development Laboratory Nec Corporation
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Nishio Naoharu
Ulsi Device Development Laboratory Nec Corporation
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Kikuchi Hiroaki
Ulsi Device Development Laboratories Nec Corporation
関連論文
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- Dual Damascene Interconnect Technology for 130-nm-node Complementary Metal-Oxide-Semiconductor Devices Using Ladder-Oxide Film
- Lateral Diffusion Distance Measurement of 40-80 nm Junctions by Etching/TEM-Electron Energy Loss Spectroscopy Method
- A Precise SOI Film Thickness Measurement Including Gate Depletion and Quantum Effects
- Two-Dimensional Dopant Profiling of nMOSFETs with Shallow-Extensions Using Electrochemical Etching Technique
- Partially Bonded Silicon on Insulator Substrates for Intelligent Power ICs