Device Performance of an n-Channel Organic Thin-Film Transistor with LiF/Al Bilayer Source and Drain Electrodes : Atoms, Molecules, and Chemical Physics
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概要
- 論文の詳細を見る
We investigated the device properties of a copper (II) perfluorophthalocyanine (F_<16>CuPc)-based n-channel organic thin-film transistor (TFT) with source and drain electrodes consisting of an LiF/Al bilayer. We clarified that the LiF thin film intercalated between the F_<16>CuPc and Al layers played a key role in the observed field-effect transistor characteristics of the TFT. We concluded that the contact resistance was effectively reduced by the LiF layer, providing protection against an unfavorable chemical reaction with Al and possible formation of n-doped regions in the vicinity of the LiF/Al electrodes of the F_<16>CuPc layer.
- 社団法人応用物理学会の論文
- 2002-07-01
著者
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Tanigaki N
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
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Yase Kiyoshi
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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TAKADA Noriyuki
National Institute of Advanced Industrial Science and Technology
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HOSHINO Satoshi
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST
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Yamamoto K
Univ. Of Tsukuba
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TANIGAKI Nobutaka
Photonics Research Institutes, National Institute of Advanced Industrial Science and Technology
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Hoshino S
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Tanigaki Nobutaka
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
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Tanigaki Nobutaka
Photonics Research Institute Aist
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CHIKAMATSU Masayuki
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST
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YOSHIDA Yuji
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST
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MISAKI Masahiro
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST
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NAGAMATSU Shuichi
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST
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Misaki Masahiro
Photonics Research Institute Aist
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Yoshida Y
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Yamamoto K
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Takada N
National Institute Of Advanced Industrial Science And Technology
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Hoshino Satoshi
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Chikamatsu Masayuki
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Nagamatsu Shuichi
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Yamamoto K
Saga Univ. Saga Jpn
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Tanigaki Nobutaka
Photonic Device Application Group, National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan
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