Electrical Transport Properties of Josephson Junctions Using Polyimide Langmuir-Blodgett Films
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概要
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Using thermally stable ultrathin polyimide (PI) Langmuir-Blodgett films, we made tunnel junctions having structures of Nb/PI/(Pb-Bi) and Au/PI/(Pb-Bi). Then we examined the electrical transport properties of the junctions. Here, Nb and Pb-Bi are superconducting electrodes, and Au is a base-(noble metal) electrode. For Nb/PI/(Pb-Bi) junctions, it was found that an inherent oxide layer formed on a base-Nb electrode makes a significant contribution to the electrical conduction through the PI layer and that a typical current-voltage (I-V) characteristic based on the ideal Josephson junction was obtained even when the number of deposited PI layers was zero. For Au/PI/(Pb-Bi) junctions, typical I-V characteristics of tunnel junctions were obtained at a temperature below the critical temperature of a Pb-Bi superconducting alloy only when the number of deposited layers was 27.
- 社団法人応用物理学会の論文
- 1990-01-20
著者
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Nakagawa Manabu
Department Of Nuclear Medicine And Radiology Institute Of Development Aging And Cancer Tohoku Univer
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Kubota Tohru
Department Of Electrical Engineering And Electronics Faculty Of Engineering Seikei University
-
Sekine M
Association Of Super-advanced Electronics Technologies (aset):(present Address)process & Manufac
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering
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Sekine Matsuo
Department Of Applied Electronics Tokyo Institute Of Technology
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Nakagawa Manabu
Department Of Applied Electronics Tokyo Institute Of Technology
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