The Charge Transport in Organic Field-Effect Transistor as an Interface Charge Propagation: The Maxwell–Wagner Effect Model and Transmission Line Approximation
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概要
- 論文の詳細を見る
By analyzing electric field migration in the pentacene organic field-effect transistor channel (OFET), visualized using the time-resolved microscopic optical second harmonic generation (TRM-SHG) is analyzed the propagation of injected carriers. We find that the accumulated charge propagation on the pentacene–gate insulator interface of the three-electrode system is clearly different from the drift in electric field of the two-electrode system. The propagation of injected carriers is evaluated on the basis of the Maxwell–Wagner effect model and the transmission line approximation. We show that the interface charge accumulation has a significant contribution to the charge transport in OFET. Proposed model for the transient state is beyond the limits of common used impedance spectroscopy models and represents extension of the small-signal analysis. Found relation between mobility and transit time helps in analysis of OFET transit time sensitive experiments such as the time-of-flight technique (TOF) or TRM-SHG.
- 2010-07-25
著者
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WEIS Martin
Department of Physical Electronics, Tokyo Institute of Technology
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Manaka Takaaki
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering
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Taguchi Dai
Department Of Physical Electronics Tokyo Institute Of Technology
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Manaka Takaaki
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Lin Jack
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Iwamoto Mitsumasa
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Taguchi Dai
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Weis Martin
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Weis Martin
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Lin Jack
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Lin Jack
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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